Development history of and new trends in MOSFETs with differing transistor structures and scaling stages (IMAGE)
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the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern complementary metal-oxide-semiconductor (CMOS) ICs. Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking in CFET/3DS-FET or vertical-channel transistor structure with the potential 2DM, CNT, or AOS materials for the future.
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