World’s First N-Channel Diamond Field-Effect Transistor (IMAGE)

National Institute for Materials Science, Japan

World’s First N-Channel Diamond Field-Effect Transistor

Caption

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain current increased when the gate voltage (Vg) was increased from -20 V (indicated by a black line) to 10 V (indicated by a yellow line).

Credit

Satoshi Koizumi, Meiyong Liao National Institute for Materials Science

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