computer_memory (IMAGE)

Stanford University School of Engineering

computer_memory

Caption

Cross-sections of phase-change memory devices in the high- and low-resistance states. The diameter of the bottom electrode is ~40 nanometers. Arrows mark some of the van der Waals (vdW) interfaces, which form between layers of the superlattice materials. The superlattice is disrupted and reformed between the high- and low-resistance states.​ (Image credit: Courtesy of the Pop Lab)

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Courtesy of the Pop Lab

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