A schematic diagram of the optical memristor device developed in this study. (IMAGE)

Tokyo University of Science

A schematic diagram of the optical memristor device developed in this study.

Caption

The device consists of an Sn-doped In2O3 and Nb-doped SrTiO3 (ITO/Nb:STO, GND: Ground) junction that demonstrates the ability to control the relaxation time of a photo-induced current under UV irradiation by applying a small voltage.

Credit

Kentaro Kinoshita from TUS, Japan Image source link: https://onlinelibrary.wiley.com/doi/10.1002/advs.202304804

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License

CC BY

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