FIG 1 (IMAGE)
Caption
Fig. 1 (a) Schematic diagram of main physical processes occurring in diamond A under photoexcitation. (b) Absorption spectrum of diamond A. The inset shows a schematic diagram of absorption process and a differential spectrum of absorption coefficient. (c) PL spectrum of diamond A under 193 nm pulse excitation. (d) and (e) Spatial distribution of photoexcited excess carrier generation rate G and steady-state carriers within the device. The three selected wavelengths are 210 nm, 225 nm and 228 nm. (f) Experimental EQE and simplified-calculated EQE of the diamond A-based photodetector with the three selected wavelengths marked. This simplified model can well explain the decline of EQE at shortwave.
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